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| ORALS (23) |
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Sai Swaroop Akaram (Fraunhofer ENAS, Germany)
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Bond Front Kinetics and Adherence of Direct Wafer Bonding in Dielectric-Dielectric Interfaces
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Ahmad Ali (CEA, France)
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Ti metallization for p-GaAsSb base contact
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Emanuele Cattarinuzzi (STMicroelectronics, Italy)
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Shear tests of BEoL interfaces with in-situ SEM imaging
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Bismiya fasni Chakkalakunnan (IM2NP, Aix Marseille University, France)
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Reactive diffusion in Ni-Co-Si Ternary system using Bilayer and Alloyed thin films
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Mohamed Charai (Institut Matériaux Microélectronique Nanosciences de Provence, France)
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The formation mechanism and kinetics of Ni₃GaAs nano-thin films on GaAs
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Imants Cirulis (Feaunhofer ENAS, Germany)
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Development of the Aluminium Hybrid Bonding
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André Clausner (Fraunhofer IKTS, Germany)
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PFAS-free Polyimide Passivation Thin Films in Advanced Metallization Stacks: Advanced Characterization, FEM Modeling, and Comparison with Conventional Polymers
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Arno Depoorter (Ghent University, Belgium)
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Pole figure measurements in grazing-incidence configuration for characterizing thin film texture
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Daniel Dick (Chemnitz University of Technology, Germany)
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Investigating local stoichiometry fluctuations in nm-thin semiconductor alloys: a case study on SiGe
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Lillà Ferreint-Roselli (CEA-LETI, France)
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Pt redistribution in Ni(Pt)Si layers obtained via total vs partial reactions and its impact on specific contact resistivity
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Patrick Hopkins (University of Virginia, USA)
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Assessment of defects and quality of thin films and interfaces with laser-based thermoreflectance thermal conductivity measurements
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Vahide Hosseini (Fraunhofer ENAS, Germany)
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Low-Pressure HF Vapor MACE of Silicon Nanowires: Pt vs Pd Catalyst Effects on Morphology and Etch Rate
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Joelle Sephora Kafando (STMicroelectronics, France)
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Low-temperature formation of ultra-thin Co disilicide (CoSi₂) layers for advanced CMOS applications
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Alessandro Mapelli (Confovis, Germany)
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Co-Registered Automated Optical Inspection and Metrology for C4/TCB Micro-Bumps with Infrared Structured Illumination Microscopy of Bonded Interfaces
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Marie Merlin (CEA Leti, France)
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Study of Doping Methods and Ge-PAI Conditions on Ti Silicidation for Advanced FD-SOI Nodes
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Christian Miersch (Fraunhofer Technology Center High-Performance Materials THM, Germany)
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Plasma enhanced Atomic Layer Etching on AlGaN/GaN: process development, stability, recess etching of source, drain and gate
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Florent Mignerot (Aix-Marseille Université, France)
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Crystallization investigations of Ge-rich GST cells using in situ thermal pulses coupled with STEM-EDX and HR-TEM analyses
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Hideaki Nakatsubo (Tanaka Precious Metal Technologies, Japan)
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A Novel Thermally Stable Ruthenium Precursor Enabling Dense, Lower Resistivity and Inherent Selectivity against SiO2 via Atomic Layer Deposition for Advanced Interconnects
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Hugo Nuez (STMicroelectronics, France)
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Underlayer selection for TiSiN ALD deposition on Copper thin film
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Kirsch Peer (Merck Electronics KGaA, Germany)
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Magnetic Tunnel Junctions Based on Chiral Self-Assembled Monolayers
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Tobias Urban (3-5 Power Electronics GmbH, Germany)
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GaAs pin diodes – highly efficient and simple power devices
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Seppe Van Dyck (Ghent University, Belgium)
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TMD Superlattices for Phase Change Memory: Growth and Thermal Characterization
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Andreas Zienert (Fraunhofer ENAS, Germany)
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Simulation of Si Epitaxy in Single Wafer Reactors
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| 15/23 |
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| 15/23 |
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