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Tue 24 |
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Wed 25 |
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Thu 26 |
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Session 5 - Silicides and Contacts |
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Chairperson: Graziella Tallarida |
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09:00-09:20 |
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Pt redistribution in Ni(Pt)Si layers obtained via total vs partial reactions and its impact on specific contact resistivity |
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Lillà Ferreint-Roselli,
CEA-LETI, France |
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09:20-09:40 |
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Reactive diffusion in Ni-Co-Si Ternary system using Bilayer and Alloyed thin films |
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Bismiya fasni Chakkalakunnan,
IM2NP, Aix Marseille University, France |
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09:40-10:00 |
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Low-temperature formation of ultra-thin Co disilicide (CoSi₂) layers for advanced CMOS applications |
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Joelle Sephora Kafando,
STMicroelectronics, France |
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10:00-10:20 |
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Study of Doping Methods and Ge-PAI Conditions on Ti Silicidation for Advanced FD-SOI Nodes |
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Marie Merlin,
CEA-LETI, France |
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10:20-10:40 |
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The formation mechanism and kinetics of Ni₃GaAs nano-thin films on GaAs |
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Mohamed Charai,
Institut Matériaux Microélectronique Nanosciences de Provence, France |
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10:40-11:10 |
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Coffee Break / Posters / Exhibition |
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Session 6 - Analytical techniques, Characterisation & Reliabilty |
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Chairperson: Dominique
Mangelinck |
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11:10-11:40 |
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INVITED |
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Co-Registered Automated Optical Inspection and Metrology for C4/TCB Micro-Bumps with Infrared Structured Illumination Microscopy of Bonded Interfaces |
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Alessandro Mapelli,
Confovis, Germany |
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11:40-12:00 |
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Assessment of defects and quality of thin films and interfaces with laser-based thermoreflectance thermal conductivity measurements |
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Patrick E. Hopkins,
University of Virginia, USA |
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12:00-12:20 |
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Pole figure measurements in grazing-incidence configuration for characterizing thin film texture |
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Arno Depoorter,
Ghent University, Belgium |
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12:20-12:40 |
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Shear tests of BEoL interfaces with in-situ SEM imaging |
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Emanuele Cattarinuzzi,
STMicroelectronics, Italy |
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Session7 - Memory / Novel Devices |
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Chairperson: Samuele Sciarrillo |
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13:40-14:00 |
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TMD Superlattices for Phase Change Memory: Growth and Thermal Characterization |
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Seppe Van Dyck,
Ghent University, Belgium |
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14:00-14:20 |
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Crystallization investigations of Ge-rich GST cells using in situ thermal pulses coupled with STEM-EDX and HR-TEM analyses |
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Florent Mignerot,
Aix-Marseille Université, France |
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14:20-14:40 |
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GaAs pin diodes – highly efficient and simple power devices |
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Tobias Urban,
3-5 Power Electronics GmbH, Germany |
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14:40-15:00 |
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Magnetic Tunnel Junctions Based on Chiral Self-Assembled Monolayers |
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Peer Kirsch,
Merck Electronics KGaA, Germany |
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15:00-15:20 |
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Ti metallization for p-GaAsSb base contact |
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Ali Ahmad,
CEA, France |
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15:20-15:50 |
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Coffee Break / Posters / Exhibition |
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Session 8 - Unit Processes |
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Chairperson: Magali Gregoire |
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15:50-16:20 |
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INVITED |
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From Full-Field to Single-Spot: Laser-Based Processing for Microelectronics |
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Maurice Clair,
3D-Micromac AG, Germany |
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16:20-16:40 |
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Low-Pressure HF Vapor MACE of Silicon Nanowires: Pt vs Pd Catalyst Effects on Morphology and Etch Rate |
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Vahide Hosseini,
Fraunhofer ENAS, Germany |
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16:40-17:00 |
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Ion Beam-Based 3D Nanopatterning for Multilayer and Micro-Optical Devices |
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Andrea Schulze,
scia Systems GmbH, Germany |
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